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LiNbO3 & MgO:LiNbO3 Pockels Cell
    LiNbO3 & MgO:LiNbO3 Crystals LiNbO3 crystal is a low cost photoelectric material with good mechanical and physical properties as well as high optical homogeneity. It has been widely used as frequency doublers for wavelength > 1mm and optical parametric oscillators (OPOs) pumped at 1064nm as well as quasi-phase-matched (QPM) devices.
  • DETAIL
  • STANDARD PRODUCT
  • BASIC PROPERTIES
  • Applications: 


        With preferable E-O coefficients, LiNbO3 crystal has become the most commonly used material for Q-switches and phase modulators, waveguide substrate, and surface acoustic wave (SAW) wafers, etc. Compared with LiNbO3, MgO:LiNbO3 crystal exhibits higher damage threshold.



  • Typical Sizes

    9×9×25 mm3  10×10×20 mm3

    6×6×20 mm3  4×4×15 mm3


    Other size is available upon request 

    Dimension Tolerance

    Z-axis: ± 0.2 mm 

    X-axis and Y-axis: ±0.1 mm 

    Chamfer

    < 0.2 mm @ 45°  

    Accuracy of Orientation

    Z-axis: < ± 5′ 
    X-axis and Y-axis: < ± 10′ 

    Parallelism

    < 10" 

    Surface Quality [S/D]

    10/5 

    Flatness

    λ/10 @ 633 nm 

    AR-coating

    R < 0.15% @ 1064 nm 

    Electrodes

    Gold/Chrome plated on X-faces 

    Wavefront Distortion

    < λ/6 @ 633 nm 

    Extinction Ratio

    > 100:1 @ 633 nm (ϕ6 mm beam) 

    Damage Threshold

    100 MW/cm2 (10 ns, 1064 nm)


  • Structural and Physical Properties


    Crystal Structure

    Trigonal, Space group R3c, Point group 3m

    Cell Parameters

    a=5.148 Å , c=13.863 Å

    Melting Point

    1253℃

    Curie Temperature

    1140℃

    Mohs Hardness

    5

    Density

    4.64g/cm3

    Elastic Stiffness Coefficients

    CE11 =2.33(×1011N/m2  )

    CE33 =2.77(×1011N/m2  )


     Optical and Electro-optical Properties


    Transparency Range

    420-5200nm

    Optical Homogeneity

    ~ 5 x 10-5/cm

    Refractive indices at 1064nm

    ne = 2.146, no = 2.220 @ 1300 nm

    ne = 2.156, no = 2.232 @ 1064 nm

    ne = 2.203, no = 2.286 @ 632.8 nm

    NLO Coefficients

    d33 = 86 x d36 (KDP)

    d31 =11.6 x d36 (KDP)

    d22 = 5.6 x d36 (KDP)

    Effective NLO Coefficients

    γT33 = 32 pm/V, γS33 = 31 pm/V

    γT31 =10 pm/V, γS31=8.6 pm/V

    γT22 = 6.8 pm/V, γS22= 3.4 pm/V

    Half-Wave Voltage, DC
    Electrical field // z, light ⊥z:
    Electrical field // x or y, light // z:

     

    3.03 KV 

    4.02 KV

    Damage Threshold

    100 MW/cm2 (10 ns, 1064nm)


    Thermal and Electrical Properties 


    Melting Point

    1250℃

    Curie Temperature

    1140℃

    Thermal Conductivity

    38W/m/K @25℃

    Thermal Expansion Coefficients (at 25℃)

    //a, 2.0×10-6/K
    //c, 2.2×10-6/K

    Resistivity

    2×10-6 Ω·cm @200℃

    Dielectric Constants

    εS11/ε0  =43               εT11/ε0=78   
    εS33/ε0  =28               εT33/ε0= 32

    Piezoelectric Strain Constant

    D22=2.04(×10-11 C/N )
    D33=19.22 (×10-11 C/N  )

     no2=4.9048+0.11768/(λ2-0.04750)-0.027169λ2  The Sellmeier equations (λ in μm):

     ne2=4.5820+0.099169/(λ2-0.04443)-0.02195λ2